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  Datasheet File OCR Text:
 SHINDENGEN
Super Fast Recovery Rectifiers
Single
SF8L60
600V 8A
FEATURES Voltage *oe trr70ns *oe Fully Isolated Molding *oe Dielectric strength 2kV guaranteed APPLICATION *oe PFC *oe Switching power supply *oe Free Wheel *oe CTV+B output, lighting
*oe High
OUTLINE DIMENSIONS
Case : FTO-220 (Unit : mm)
RATINGS
*oeAbsolute Maximum Ratings (If not specified Tc=25*Z) Item Symbol Conditions Ratings Storage Temperature Tstg -55*150 Operating Junction Temperature Tj 150 Maximum Reverse Voltage V RM 600 Average Rectified Forward Current 50Hz sine wave, R-load, Tc=118*Z IO 8 Peak Surge Forward Current IFSM50Hz sine wave, Non-repetitive 1 cycle peak value, Tj=25*Z 170 Dielectric Strength Vdis Terminals to case, AC 1 minute 2 Mounting Torque TOR (Recommended torque*0.3Nm) F 0.5 *oeElectrical Characteristics (If not specified Tc=25*Z) Item Symbol Conditions Forward Voltage V IF F =8A, Pulse measurement Reverse Current IR V=V Pulse measurement R RM, Reverse Recovery Time =0.5A,*@ I =1A trr IF R Thermal Resistance AEjc junction to case Ratings Max.1.5 Max.25 Max.70 Max.2.5 Unit *Z *Z V A A kV Nm Unit V EA ns *Z/W
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
SF8L60
Forward Voltage
10
Forward Current IF [A]
Tc=150C [MAX] Tc=150C [TYP] Tc=25C [MAX] Tc=25C [TYP] 1
Pulse measurement per diode
0.1
0
0.4
0.8
1.2
1.6
2
2.4
2.8
Forward Voltage VF [V]
SF8L60
20
Forward Power Dissipation
Forward Power Dissipation PF [W]
DC D=0.8 15 SIN 0.3 0.2 10 0.1 0.05 0.5
5
0
0
2
4
6
8
10
12
14
16
Average Rectified Forward Current IO [A]
Tj = Tjmax IO 0 tp D=tp /T T
SF8L60
16
Derating Curve
Average Rectified Forward Current IO [A]
14 DC 12 D=0.8 10 8 6 4 2 0 0.5 SIN 0.3 0.2 0.1 0.05
0
20
40
60
80
100
120
140
160
Case Temperature Tc [C]
VR = VRM 0 0
IO
VR tp D=tp /T T
SF8L60
350
Peak Surge Forward Capability
IFSM
10ms 10ms
300
1 cycle
Peak Surge Forward Current IFSM [A]
non-repetitive, sine wave, Tj=25C before surge current is applied
250
200
150
100
50
0
1
2
5
10
20
50
100
Number of Cycles [cycles]
SF8L60
Junction Capacitance
f=1MHz Tc=25C TYP per diode
1000
Junction Capacitance Cj [pF]
100
1
10
100
Reverse Voltage VR [V]


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